IS43TR81280CL-TR

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容量	1G
規格	128Mx8
電壓	1.35V
類型	DDR3
刷新	8K
速度	1866, 1600, 1333
狀態	Prod
腳位數	BGA(78)
評論上一篇	IS43TR81280BL
字數	1280 = 128M
工作電壓範圍	TR = 1.5V DDR3
Generation	TR = TR
總線寬度	8 = x8
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
外包裝	Tape on Reel

IS43TR81280CL-TR 特徵

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
-Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 933 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) OPTIONS
Configuration: 512Mx16(dual die)
Package: 96-ball BGA (9mm x 13mm) ADDRESS TABLE SPEED BIN Speed Option 125K 107M Units JEDEC Speed Grade DDR3-1600K DDR3-1866M CL-nRCD-nRP 11-11-11 13-13-13 tCK tRCD,tRP(min) ns Note:Faster speed options are backward compatible to slower speed options. 13.75 13.91 AUGUST 2020
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200 MHz in DLL off mode