IS46TR16256B-093NBLA1

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容量	4G
規格	256Mx16
電壓	1.5V
類型	DDR3
刷新	8K
速度	093 = 1066MHz
狀態	Prod
腳位數	BGA(96)
評論上一篇	IS46TR16256A
温度等级	A1 = Automotive Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	256 = 256M
CL（CAS延遲）	N = 14
工作電壓範圍	TR = 1.5V DDR3
Generation	B = B
總線寬度	16 = x16
腳位/封裝	B = BGA
產品系列	46 = DDR/DDR2/DDR3/DDR4 Automotive grade

IS46TR16256B-093NBLA1 特徵

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) OPTIONS
Configuration: 512Mx8 256Mx16
Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN ADVANCED INFORMATION MARCH 2018
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling

IC 編號	庫存數量	可用數量	IC 編號	庫存數量	可用數量
IS46TR16256B-093NBLA1-TR			IS46TR16256BL-107MBLA3-TR
IS46TR16256BL-107MBLA3