IS46TR85120B-125KBLA1-TR

容量 4G
規格 512Mx8
電壓 1.5V
類型 DDR3
刷新 8K
速度 125 = 800MHz
狀態 S=NOW
腳位數 BGA(78)
評論上一篇
温度等级 A1 = Automotive Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation B = B
字數 5120 = 512M
CL(CAS延遲) K = 11
工作電壓範圍 TR = 1.5V DDR3
總線寬度 8 = x8
腳位/封裝 B = BGA
產品系列 46 = DDR/DDR2/DDR3/DDR4 Automotive grade
外包裝 Tape on Reel

IS46TR85120B-125KBLA1-TR 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 1066 MHz
  • 8 internal banks for concurrent operation
  • 8n-Bit pre-fetch architecture
  • Programmable CAS Latency
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) OPTIONS
  • Configuration: 512Mx8 256Mx16
  • Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN ADVANCED INFORMATION MARCH 2018
  • Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
  • Write Leveling
 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS46TR85120B-125KBLA1 IS46TR85120BL-125KBLA1-TR
IS46TR85120B-125KBLA2 IS46TR85120BL-125KBLA2
IS46TR85120B-125KBLA2-TR IS46TR85120BL-125KBLA2-TR
IS46TR85120BL-125KBLA1