IS43QR16512A-TR

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容量	8G
規格	512Mx16
電壓	1.2V
類型	DDR4
刷新	8K
速度	2666, 2400
狀態	Prod
評注
腳位數	BGA(96)
字數	512 = 512M
工作電壓範圍	QR = 1.1V - 1.8V DDR4
Generation	TR = TR
總線寬度	16 = x16
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
外包裝	Tape on Reel

IS43QR16512A-TR 特徵

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 933 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) OPTIONS
Configuration: 512Mx16 (dual die)
Package: 96-ball BGA (9mm x 13mm) SPEED BIN ADVANCED INFORMATION NOVEMBER 2019
Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C 1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C 0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C
Partial Array Self Refresh
Asynchronous RESET pin
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200 MHz in DLL off mode