IS41LV16100D-50KLI

容量 16M
規格 1Mx16
電壓 3.3V
類型 EDO
刷新 1K
速度 50 = 50Ns
狀態 Prod
腳位數 SOJ(42), TSOP2(44/50)
評論上一篇 IS41LV16100C
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
Generation D = D
字數 100 = 1M
工作電壓範圍 LV = 3.3V
總線寬度 16 = x16
腳位/封裝 K = S0J
產品系列 41 = Asynchronous

IS41LV16100D-50KLI 特徵

  • TTL compatible inputs and outputs; tristate I/O
  • Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden — Self refresh Mode: 1,024 cycles /128 ms
  • JEDEC standard pinout
  • Single power supply: 3.3V ± 10%
  • Byte Write and Byte Read operation via two CAS

概觀

The ISSI IS41LV16100D is a 1,048,576 x 16-bit high- performance CMOS Dynamic Random Access Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS41LV16100D-50KLI-TR 5,000 IS41LV16100D-50TI
IS41LV16100D IS41LV16100D-50TI-TR
IS41LV16100D-50KI IS41LV16100D-50TLI 11,700
IS41LV16100D-50KI-TR IS41LV16100D-50TLI-TR 4,400