IS41LV16105D-50KI

容量 16M
規格 1Mx16
電壓 3.3V
類型 FP
刷新 1K
速度 50 = 50Ns
狀態 Prod
腳位數 SOJ(42), TSOP2(44/50)
評論上一篇 IS41LV16105C
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 blank = Sn/Pb
Generation D = D
字數 105 = 1M
工作電壓範圍 LV = 3.3V
總線寬度 16 = x16
腳位/封裝 K = S0J
產品系列 41 = Asynchronous

IS41LV16105D-50KI 特徵

  • TTL compatible inputs and outputs; tristate I/O
  • Refresh Interval: — 1,024 cycles/16 ms
  • Refresh Mode: — RAS-Only, CAS-before-RAS (CBR), and Hidden
  • JEDEC standard pinout
  • Single power supply: — 3.3V ± 10%
  • Byte Write and Byte Read operation via two CAS

概觀

The ISSI IS41LV16105D is a 1,048,576 x 16-bit high-perfor- mance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O. These features make the IS41LV16105D ideally suited for high-bandwidth graphics, digital signal processing, high- performance computing systems, and peripheral applications that run without a clock to synchronize with the DRAM. The IS41LV16105D is packaged in a 42-pin 400-mil SOJ and 400-mil 50/44-pin TSOP (Type II).

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS41LV16105D-50KI-TR IS41LV16105D-50TI
IS41LV16105D IS41LV16105D-50TI-TR
IS41LV16105D-50KLI 330 IS41LV16105D-50TLI 50,000
IS41LV16105D-50KLI-TR IS41LV16105D-50TLI-TR 1,000