IS43LQ16256BL-062BLI

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容量 4G
規格 Single Channel (1x16)
電壓 1.1V/1.8V
類型 LPDDR4
速度 4266, 3733, 3200
狀態 S=Q2/22
腳位數 BGA(200)
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
字數 256 = 256M
Low Voltage L = Supports only 0.6V I/O (LPDDR4X)
工作電壓範圍 LQ = 1.1V LPDDR4
Generation B = B
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade

IS43LQ16256BL-062BLI 特徵

  • Configuration: - 256
  • - 8 internal banks per each channel Mb x16 x 2 channels
  • On-Chip ECC:
  • - Single-bit error correction (per 64-bits)
  • Low-voltage Core and I/O Power Supplies VDD1 = 1.70-1.95V VDD2 = 1.06-1.17V VDDQ = 1.06-1.17V (LPDDR4) VDDQ = 0.57-0.65V (LPDDR4X) LVSTL(Low Voltage Swing Terminated Logic) I/O Interface Internal VREF and VREF Training
  • Dynamic ODT : DQ ODT :VSSQ Termination CA ODT :VSS Termination
  • Max. Clock Frequency : 1.6GHz (3.2Gbps)
  • 16n Pre-fetch DDR architecture
  • Single data rate (multiple cycles) command/ address bus
  • Bidirectional/differential data strobe per byte of data (DQS/DQS#)
  • Programmable burst lengths (16 or 32)
  • ZQ Calibration
  • Operation Temperature Industrial (TC = -40°C to 95°C) Automotive, A1 (TC = -40°C to 95°C) Automotive, A2 (TC = -40°C to 105°C) Automotive, A3 (TC = -40°C to 125°C)
  • On-chip temperature sensor whose status can be read from MR4

概觀

The IS43/46LQ32256EA and IS43/46LQ32256EAL are 8Gbit CMOS LPDDR4 SDRAM. The device is orga- nized as 2 channels per device, and individual channel is 8-banks and 16-bits. This product uses a double-da- ta-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.

 

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IS43LQ16256BL-062BLI-TR IS43LQ16256B-062BLI-TR
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IS43LQ16256B-062BLI