IS42R16800E-8TL

容量 128M
規格 8Mx16
電壓 2.5V
類型 SDR
刷新 4K
狀態 EOL
評注  
腳位數 TSOP2(54), BGA(54)
速度Mhz 133
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation E = E
總線寬度 16 = 16
工作電壓範圍 R = 2.5V DDR or 2.5V SDR
CL(CAS延遲) T = 17
字數 8M = 8M
產品系列 42 = SDR Commercial/Industrial grade

IS42R16800E-8TL 特徵

  • Clock frequency: 133, 125 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: 2.5V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

相關IC编號

IS42R16800E-8TL-TR IS42R16800E-75TLI IS42R16800E-8TLI-TR IS45R16800E-8BLA1
IS42R16800E-75BL IS42R16800E-75TLI-TR IS45R16800E-75BLA1 IS45R16800E-8BLA1-TR
IS42R16800E-75BL-TR IS42R16800E-8BL IS45R16800E-75BLA1-TR IS45R16800E-8BLA2
IS42R16800E-75BLI IS42R16800E-8BL-TR IS45R16800E-75BLA2 IS45R16800E-8BLA2-TR
IS42R16800E-75BLI-TR IS42R16800E-8BLI IS45R16800E-75BLA2-TR
IS42R16800E-75TL IS42R16800E-8BLI-TR IS45R16800E-75TLA1
IS42R16800E-75TL-TR IS42R16800E-8TLI IS45R16800E-75TLA1-TR