IS42RM16160E-6BLI-TR

容量 256M
規格 16Mx16
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 8K
狀態 EOL
評注  
腳位數 BGA(54)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation E = E
總線寬度 16 = 16
速度 6 = 166MHz
工作電壓範圍 RM = 2.5V
CL(CAS延遲) B = 3
字數 16M = 16M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42RM16160E-6BLI-TR 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal 4 banks operation.
  • Burst Read Single Write operation.
  • Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
  • Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16.

 

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