容量 32M
規格 2Mx16
電壓 1.8/2.5/3.3V
刷新 4K
狀態 EOL
腳位數 BGA(54)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation C = C
總線寬度 16 = 16
速度 6 = 166MHz
工作電壓範圍 VM = 1.8V mobile SDR
CL(CAS延遲) B = 3
字數 2M = 2M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42VM16200C-6BLI-TR 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type.
  • - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • Programmable Driver Strength Control
  • - Full Strength or 1/2, 1/4, 1/8 of Full Strength
  • Deep Power Down Mode.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal dual banks operation.
  • Burst Read Single Write operation.
  • Special Function Support.
  • - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh)


These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.



IS42VM16200C-6BLI IS42RM16200C-75BLI IS42SM16200C-6BLI-TR IS42VM16200C-75BLI
IS42RM16200C-6BLI IS42RM16200C-75BLI-TR IS42SM16200C-75BLI IS42VM16200C-75BLI-TR
IS42RM16200C-6BLI-TR IS42SM16200C-6BLI IS42SM16200C-75BLI-TR