容量 512M
規格 16Mx32
電壓 1.8V
刷新 8K
狀態 Contact ISSI
腳位數 BGA(90)
速度Mhz 100
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation C = C
總線寬度 32 = 32
工作電壓範圍 VM = 1.8V mobile SDR
CL(CAS延遲) B = 3
字數 16M = 16M
產品系列 42 = SDR Commercial/Industrial grade

IS42VM32160C-10BLI 特徵

  • IS42VM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES:
  • -10 Unit 10 12 ns ns 100 Mhz Mhz 83 8.0 9.0 ns ns OPTIONS:
  • Configuration: 16Mx32
  • Power Supply: Vdd/Vddq = 1.8V
  • Package: 90 Ball BGA (8mmx13mm)
  • Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC)


: ISSI's IS42VM32160C is a 512Mb Mobile Synchronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs sig- nals are registered on the rising edge of the clock input, CLK. The 512Mb SDRAM is internally configured by stacking two 256Mb, 16Mx16 devices. Each of the 4M x32 banks is organized as 8192 rows by 512 columns by 32 bits.



IS42VM32160C-10BLI-TR IS42VM32160C-10BI-TR IS42VM32160C-10BL-TR
IS42VM32160C-10BI IS42VM32160C-10BL