容量 64M
規格 2Mx32
電壓 1.8V
刷新 4K
狀態 EOL
腳位數 TSOP2(86), BGA(90)
速度Mhz 133
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation E = E
總線寬度 32 = 32
工作電壓範圍 VS = 1.8V SDR
CL(CAS延遲) B = 3
字數 2M = 2M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42VS32200E-10BLI-TR 特徵

  • Clock frequency: 133, 100 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 1.8V power supply
  • LVTTL interface
  • Programmable burst length: (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • 4096 refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Available in 400-mil 86-pin TSOP II and 90-ball BGA


ISSI's 64Mb Synchronous DRAM IS42VS32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high- speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.



IS42VS32200E-10BLI IS42VS32200E-10TL-TR IS42VS32200E-75BL-TR IS42VS32200E-75TL-TR
IS42VS32200E-10BL IS42VS32200E-10TLI IS42VS32200E-75BLI IS42VS32200E-75TLI
IS42VS32200E-10BL-TR IS42VS32200E-10TLI-TR IS42VS32200E-75BLI-TR IS42VS32200E-75TLI-TR
IS42VS32200E-10TL IS42VS32200E-75BL IS42VS32200E-75TL