IS43LQ16128EA-TR

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容量 2G
規格 Single Channel (1x16)
電壓 1.1V/1.8V
類型 LPDDR4
速度 3200
狀態 Prod
腳位數 BGA(200)
字數 128 = 128M
工作電壓範圍 LQ = 1.1V LPDDR4
Generation TR = TR
總線寬度 16 = x16
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
外包裝 Tape on Reel

IS43LQ16128EA-TR 特徵

  • DDP (Dual Die Package) with 2 x 2Gb LPDDR2
  • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V
  • High Speed Un-terminated Logic(HSUL_12) I/O Interface
  • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O)
  • Four-bit Pre-fetch DDR Architecture
  • Multiplexed, double data rate, command/ad- dress inputs
  • Eight internal banks for concurrent operation
  • Bidirectional/differential data strobe per byte of data (DQS/DQS#)
  • Programmable Read/Write latencies(RL/WL) and burst lengths(4,8 or 16)
  • ZQ Calibration
  • On-chip temperature sensor to control self re- fresh rate
  • Partial
    • array self refresh(PASR)
  • Deep power-down mode(DPD)
  • Operation Temperature Commercial (TC = 0°C to 85°C) Industrial (TC = -40°C to 85°C) Automotive, A1 (TC = -40°C to 85°C) Automotive, A2 (TC = -40°C to 105°C) Automotive, A25 (TC = -40°C to 115°C)(3) OPTIONS

概觀

The IS43/46LD32128B is 4Gbit CMOS LPDDR2 DRAM. The device is organized as 8 banks of 16Meg words of 32bits. This product uses a double-data- rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 4n bits prefetched to achieve very high bandwidth.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS43LQ16128EA IS43LQ16128EAL-062BLI
IS43LQ16128EA-062BLI IS43LQ16128EAL-062BLI-TR
IS43LQ16128EA-062BLI-TR IS43LQ16128EAL-062TBLI
IS43LQ16128EA-062TBLI IS43LQ16128EAL-062TBLI-TR
IS43LQ16128EA-062TBLI-TR