IS61DDSB251236C-250M3LI-TR

容量 18M
規格 512Kx36
2
狀態 Prod
速度Mhz 250, 300, 333, 400
評論上一版本 Separate I/O

IS61DDSB251236C-250M3LI-TR 特徵

  • 512Kx36 and 1Mx18 configuration available.
  • On-chip delay-locked loop (DLL) for wide data valid window.
  • Seperate I/O read and write ports.
  • Synchronous pipeline read with self-timed late write operation.
  • Double Data Rate (DDR) interface for read and write input ports.
  • Fixed 2-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K#) for address and control registering at rising edges only. Two input clocks (C and C#) for data output control. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. +1.8V core power supply and 1.5V to 1.8V VDDQ, used with 0.75V to 0.9V VREF.
  • HSTL input and output interface.
  • Registered addresses, write and read controls, byte writes, data in, and data outputs.
  • Full data coherency.
  • Boundary scan using limited set of JTAG 1149.1 functions.
  • Byte write capability.
  • Fine ball grid array (FBGA) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array
  • Read/write address
  • Read enable
  • Write enable
  • Byte writes for first burst address
  • Data-in for first burst address The following are registered on the rising edge of the K# clock:
  • Byte writes for second burst address

概觀

The 18Mb IS61DDSB251236C and IS61DDSB21M18C are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have a separate I/O bus. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operations of these DDR-II (Burst of 2) SIO SRAMs.

 

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