容量 18M
規格 1Mx18
狀態 Prod
速度Mhz 450, 500, 550, 567
評論上一版本 2.5 Cycle Read Latency
包裝代碼 B4 = 165 ball BGA (13 x 15 mm)
產品系列 61 = QUAD/P DDR-2/P
ROHS版 L = Lead-free
突發類型 B4 = Burst 4
硅片版本 C = C
讀延時(RL) blank = 1.5 clock cycles or 2.5 clock cycles
ODT選項 blank = No ODT
產品類別 QDP = QUADP
配置 1M18 = 1M x18
溫度範圍 I = Industrial (-40C to +85°C)
速度 550 = 550MHz
外包裝 Tape on Reel

IS61QDPB41M18C-550B4LI-TR 特徵

  • 512Kx36 and 1Mx18 configuration available.
  • On-chip Delay-Locked Loop (DLL) for wide data valid window.
  • Separate independent read and write ports with concurrent read and write operations.
  • Synchronous pipeline read with late write operation.
  • Double Data Rate (DDR) interface for read and write input ports. 2.5 cycle read latency. Fixed 4-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K#) for address and control registering at rising edges only. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.
  • Data Valid Pin (QVLD).
  • HSTL input and output levels.
  • Registered addresses, write and read controls, byte writes, data in, and data outputs.
  • Full data coherency.
  • Boundary scan using limited set of JTAG 1149.1 functions.
  • Byte write capability.
  • Fine ball grid array (FBGA) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array
  • Programmable impedance output drivers via 5x user- supplied precision resistor.
  • ODT (On Die Termination) feature is supported
  • Read/write address
  • Read enable
  • Write enable
  • Byte writes for burst addresses 1 and 3
  • Data-in for burst addresses 1 and 3 The following are registered on the rising edge of the K# clock:
  • Byte writes for burst addresses 2 and 4


The 18Mb IS61QDPB451236C/C1/C2 and IS61QDPB41M18C/C1/C2 are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operations of these QUADP (Burst of 4) SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Reads and writes are performed in double data rate. The following are registered internally on the rising edge of the K clock:



IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61QDPB41M18C-450B4 IS61QDPB41M18C1-450M3
IS61QDPB41M18C-450B4-TR IS61QDPB41M18C1-450M3-TR
IS61QDPB41M18C-450B4I IS61QDPB41M18C1-450M3I
IS61QDPB41M18C-450B4I-TR IS61QDPB41M18C1-450M3I-TR
IS61QDPB41M18C-450B4L IS61QDPB41M18C1-450M3L
IS61QDPB41M18C-450B4L-TR IS61QDPB41M18C1-450M3L-TR
IS61QDPB41M18C-450B4LI IS61QDPB41M18C1-450M3LI
IS61QDPB41M18C-450B4LI-TR IS61QDPB41M18C1-450M3LI-TR
IS61QDPB41M18C-450M3 IS61QDPB41M18C1-500B4
IS61QDPB41M18C-450M3-TR IS61QDPB41M18C2-450B4
IS61QDPB41M18C-450M3I IS61QDPB41M18C2-450B4-TR
IS61QDPB41M18C-450M3I-TR IS61QDPB41M18C2-450B4I
IS61QDPB41M18C-450M3L IS61QDPB41M18C2-450B4I-TR
IS61QDPB41M18C-450M3L-TR IS61QDPB41M18C2-450B4L
IS61QDPB41M18C-450M3LI IS61QDPB41M18C2-450B4L-TR
IS61QDPB41M18C-450M3LI-TR IS61QDPB41M18C2-450B4LI
IS61QDPB41M18C-500B4 IS61QDPB41M18C2-450B4LI-TR
IS61QDPB41M18C-500B4-TR IS61QDPB41M18C2-450M3
IS61QDPB41M18C1-450B4 IS61QDPB41M18C2-450M3-TR
IS61QDPB41M18C1-450B4-TR IS61QDPB41M18C2-450M3I
IS61QDPB41M18C1-450B4I IS61QDPB41M18C2-450M3I-TR
IS61QDPB41M18C1-450B4I-TR IS61QDPB41M18C2-450M3L
IS61QDPB41M18C1-450B4L IS61QDPB41M18C2-450M3L-TR
IS61QDPB41M18C1-450B4L-TR IS61QDPB41M18C2-450M3LI
IS61QDPB41M18C1-450B4LI IS61QDPB41M18C2-450M3LI-TR
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