IS49NLS93200A-25WBLI-TR

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容量 288M
規格 32Mx9
狀態 Prod
接口 Separate I/O
腳位數 BGA(144)
Cycle Time Trc 15, 20
Data Rates Mbps 1066, 800
評論上一篇
包裝代碼 WB = WB
速度等級 25 = tCK = 2.5ns; tRC = 20ns
ROHS版 L = Lead-free (RoHS compliant)
配置 93200 = 32M x 9
Package Number WB = 144 - ball WBGA (RLDRAM 2)
I / O類型 S = Separate I/O
溫度範圍 I = Industrial (-40C to 85°C)
Generation A = A
產品系列 49NL = RLDRAM 2
外包裝 Tape on Reel

IS49NLS93200A-25WBLI-TR 特徵

  • Configuration: - 128Mb x16 x 1 channel
  • - 8 internal banks
  • Low-voltage Core and I/O Power Supplies VDD1 = 1.70-1.95V VDD2 = 1.06-1.17V VDDQ = 1.06-1.17V (LPDDR4) VDDQ = 0.57-0.65V (LPDDR4X) LVSTL(Low Voltage Swing Terminated Logic) I/O Interface Internal VREF and VREF Training
  • Dynamic ODT : DQ ODT :VSSQ Termination CA ODT :VSS Termination
  • Max. Clock Frequency : 1.6GHz (3.2Gbps)
  • 16n Pre-fetch DDR architecture
  • Single data rate (multiple cycles) command/ address bus
  • Bidirectional/differential data strobe per byte of data (DQS/DQS#)
  • Programmable burst lengths (16 or 32)
  • ZQ Calibration
  • Operation Temperature Industrial (TC = -40°C to 95°C) Automotive, A1 (TC = -40°C to 95°C) Automotive, A2 (TC = -40°C to 105°C) Automotive, A3 (TC = -40°C to 125°C)
  • On-chip temperature sensor whose status can be read from MR4

概觀

The IS43/46LQ16128A and IS43/46LQ1612AL are 2Gbit CMOS LPDDR4 SDRAM. The device is orga- nized as 1 channel per device, and individual channel is 8-banks and 16-bits. This product uses a double-da- ta-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.

 

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