容量 16M
規格 1Mx16
電壓 3.3V
類型 SDR
刷新 2K
速度 7 = 143MHz
狀態 Contact ISSI
腳位數 TSOP2(50), BGA(60)
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 blank = Sn/Pb
Generation E = E
總線寬度 16 = 16
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) T = 17
字數 1M = 1M
產品系列 42 = SDR Commercial/Industrial grade

IS42S16100E-7T 特徵

  • Clock frequency: 200, 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Two banks can be operated simultaneously and independently
  • Dual internal bank controlled by A11 (bank select)
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Byte controlled by LDQM and UDQM
  • Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA


ISSI’s 16Mb Synchronous DRAM IS42/4516100E is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.



IS42S16100E-7T-TR IS42S16100E-6BL IS42S16100E-6TL-TR IS42S16100E-7TL
IS42S16100E-5BL IS42S16100E-6BL-TR IS42S16100E-6TLI IS42S16100E-7TL-TR
IS42S16100E-5BL-TR IS42S16100E-6BLI IS42S16100E-6TLI-TR IS42S16100E-7TLI
IS42S16100E-5T IS42S16100E-6BLI-TR IS42S16100E-7BL IS42S16100E-7TLI-TR
IS42S16100E-5T-TR IS42S16100E-6T IS42S16100E-7BL-TR
IS42S16100E-5TL IS42S16100E-6T-TR IS42S16100E-7BLI
IS42S16100E-5TL-TR IS42S16100E-6TL IS42S16100E-7BLI-TR