容量 256M
規格 16Mx16
電壓 3.3V
類型 SDR
刷新 8K
速度 6 = 166MHz
狀態 Contact ISSI
腳位數 TSOP2(54), BGA(54)
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation D = D
總線寬度 16 = 16
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) T = 17
字數 16M = 16M
產品系列 42 = SDR Commercial/Industrial grade

IS42S16160D-6TLI 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA


ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.



IS42S16160D-6TLI-TR IS42S16160D-6T-TR IS42S16160D-75ETL-TR IS42S16160D-7BLI-TR
IS42S16160D-6B IS42S16160D-6TI IS42S16160D-75ETLI IS42S16160D-7T
IS42S16160D-6B-TR IS42S16160D-6TI-TR IS42S16160D-75ETLI-TR IS42S16160D-7T-TR
IS42S16160D-6BI IS42S16160D-6TL IS42S16160D-7B IS42S16160D-7TI
IS42S16160D-6BI-TR IS42S16160D-6TL-TR IS42S16160D-7B-TR IS42S16160D-7TI-TR
IS42S16160D-6BL IS42S16160D-75EBL IS42S16160D-7BI IS42S16160D-7TL
IS42S16160D-6BL-TR IS42S16160D-75EBL-TR IS42S16160D-7BI-TR IS42S16160D-7TL-TR
IS42S16160D-6BLI IS42S16160D-75EBLI IS42S16160D-7BL IS42S16160D-7TLI
IS42S16160D-6BLI-TR IS42S16160D-75EBLI-TR IS42S16160D-7BL-TR IS42S16160D-7TLI-TR
IS42S16160D-6T IS42S16160D-75ETL IS42S16160D-7BLI