IS42S16160G-7BI

容量 256M
規格 16Mx16
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 NR
評注
腳位數 TSOP2(54), BGA(54)
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 blank = Sn/Pb
Generation G = G
字數 160 = 16M
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42S16160G-7BI 特徵

  • Clock frequency: 200,166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S16160G-7BI-TR IS42S16160G-6TLI 1,100
IS42S16160G IS42S16160G-6TLI-TR 100,000
IS42S16160G-5BL 1,392 IS42S16160G-7B
IS42S16160G-5BL-TR 7,500 IS42S16160G-7B-TR
IS42S16160G-5TL 972 IS42S16160G-7BL 5,000
IS42S16160G-5TL-TR IS42S16160G-7BL-TR 10,000
IS42S16160G-6BL 5,000 IS42S16160G-7BLI 5 554
IS42S16160G-6BL-TR 7,500 IS42S16160G-7BLI-TR 12,500
IS42S16160G-6BLI 50,000 IS42S16160G-7TL 1,080
IS42S16160G-6BLI-TR 7,500 IS42S16160G-7TL-TR 6,500
IS42S16160G-6TL 2,500 IS42S16160G-7TLI 1,620
IS42S16160G-6TL-TR 5,000 IS42S16160G-7TLI-TR 12,000