IS42S16400F-5BL-TR

容量 64M
規格 4Mx16
電壓 3.3V
類型 SDR
刷新 4K
速度 5 = 200MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54), BGA(54), BGA(60)
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
Generation F = F
字數 400 = 4M
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42S16400F-5BL-TR 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • Auto refresh (CBR)
  • 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP II 54-ball FBGA (8mm x 8mm)

概觀

ISSI's 64Mb Synchronous DRAM is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S16400F-5BL 6,806 IS42S16400F-6TL 6,698
IS42S16400F IS42S16400F-6TL-TR 6,012
IS42S16400F-5BLI 286 IS42S16400F-6TLI 4,000
IS42S16400F-5BLI-TR 2,500 IS42S16400F-6TLI-TR 6,018
IS42S16400F-5TL 6,831 IS42S16400F-7BL 290 280
IS42S16400F-5TL-TR 6,032 IS42S16400F-7BL-TR 6,449
IS42S16400F-5TLI 108 IS42S16400F-7BLI 310
IS42S16400F-5TLI-TR 1,500 IS42S16400F-7BLI-TR 6,122
IS42S16400F-6BL 347 347 IS42S16400F-7TL 1,000
IS42S16400F-6BL-TR 5,000 IS42S16400F-7TL-TR 6,997
IS42S16400F-6BLI 4 IS42S16400F-7TLI 13
IS42S16400F-6BLI-TR 6,056 IS42S16400F-7TLI-TR 6,375