容量 512M
規格 16Mx32
電壓 3.3V
類型 SDR
刷新 8K
速度 75E = 133MHz
狀態 Contact ISSI
腳位數 TSOP2(86), BGA(90)
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation B = B
總線寬度 32 = 32
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) B = 3
字數 16M = 16M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42S32160B-75EBL-TR 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8192 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 86-pin TSOP-II 90-ball W-BGA


ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.



IS42S32160B-75EBL IS42S32160B-6TL-TR IS42S32160B-75ETL-TR IS42S32160B-7BLI-TR
IS42S32160B-6BL IS42S32160B-6TLI IS42S32160B-75ETLI IS42S32160B-7TL
IS42S32160B-6BL-TR IS42S32160B-6TLI-TR IS42S32160B-75ETLI-TR IS42S32160B-7TL-TR
IS42S32160B-6BLI IS42S32160B-75EBLI IS42S32160B-7BL IS42S32160B-7TLI
IS42S32160B-6BLI-TR IS42S32160B-75EBLI-TR IS42S32160B-7BL-TR IS42S32160B-7TLI-TR
IS42S32160B-6TL IS42S32160B-75ETL IS42S32160B-7BLI