容量 512M
規格 16Mx32
電壓 3.3V
類型 SDR
刷新 8K
速度 6 = 166MHz
狀態 Contact ISSI
評注 stacked die
腳位數 BGA(90)
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 blank = Sn/Pb
Generation C = C
總線寬度 32 = 32
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) B = 3
字數 16M = 16M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42S32160C-6BI-TR 特徵

  • Clock frequency: 166, 133 MHz
  • Fully synchronous operation
  • Internal pipelined architecture
  • Programmable Mode
    • CAS# Latency: 2 or 3
    • Burst Length: 1, 2, 4, 8, or full page
    • Burst Type: interleaved or linear
  • Power supply Vdd/Vddq +3.3V ± 0.3V
  • LVTTL interface
  • Auto Refresh and Self Refresh
  • Individual byte controlled by DQM0-3 OPTIONS:
  • Die revision: C
  • Configuration(s): 16Mx32
  • Package(s): 90 Ball BGA (8x13mm)
  • Lead-free package available


: The ISSI's IS42S32160C is a 512Mb Synchronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs sig- nals are registered on the rising edge of the clock input, CLK. The 512Mb SDRAM is internally configured by stacking two 256MB, 16Mx16 devices. Each of the 4M x32 banks is organized as 8192 rows by 512 columns by 32 bits.



IS42S32160C-6BI IS42S32160C-6BLI IS42S32160C-75BL-TR
IS42S32160C-6BL IS42S32160C-6BLI-TR IS42S32160C-75BLI
IS42S32160C-6BL-TR IS42S32160C-75BL IS42S32160C-75BLI-TR