IS42S32200L-7BL

容量 64M
規格 2Mx32
電壓 3.3V
類型 SDR
刷新 4K
速度 7 = 143MHz
狀態 Prod
評注  
腳位數 TSOP2(86), BGA(90)
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation L = L
總線寬度 32 = 32
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) B = 3
字數 2M = 2M
產品系列 42 = SDR Commercial/Industrial grade

IS42S32200L-7BL 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length: (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Packages: 86-pin TSOP-II 90-ball TF-BGA

概觀

ISSI's 64Mb Synchronous DRAM IS42/45S32200L is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

 

相關IC编號

IS42S32200L-7BL-TR IS42S32200L-6BI-TR IS42S32200L-6TL-TR IS42S32200L-7TL-TR
IS42S32200L-5BL IS42S32200L-6BL IS42S32200L-6TLI IS42S32200L-7TLI
IS42S32200L-5BL-TR IS42S32200L-6BL-TR IS42S32200L-6TLI-TR IS42S32200L-7TLI-TR
IS42S32200L-5TL IS42S32200L-6BLI IS42S32200L-7BLI
IS42S32200L-5TL-TR IS42S32200L-6BLI-TR IS42S32200L-7BLI-TR
IS42S32200L-6BI IS42S32200L-6TL IS42S32200L-7TL