IS45S16160D-6BLA1

容量 256M
規格 16Mx16
電壓 3.3V
類型 SDR
刷新 8K
速度 6 = 166MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54), BGA(54)
温度等级 A1 = Automotive Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation D = D
字數 160 = 16M
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 45 = SDR Automotive grade

IS45S16160D-6BLA1 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S16160D-6BLA1-TR 6,840 IS45S16160D-7CTLA1-TR
IS45S16160D-6TLA1 3,230 IS45S16160D-7CTLA2
IS45S16160D-6TLA1-TR 1,500 IS45S16160D-7CTLA2-TR
IS45S16160D-75EBLA1 1,704 IS45S16160D-7CTNA1 937
IS45S16160D-75EBLA1-TR IS45S16160D-7CTNA1-TR 1,500
IS45S16160D-75ETLA1 40,277 30,975 IS45S16160D-7CTNA2 978
IS45S16160D-75ETLA1-TR 49,500 19,500 IS45S16160D-7CTNA2-TR 1,500
IS45S16160D-7BLA1 3,218 3,582 IS45S16160D-7TLA1 1,914 8,499
IS45S16160D-7BLA1-TR 6,421 IS45S16160D-7TLA1-TR 6,880
IS45S16160D-7BLA2 6,103 IS45S16160D-7TLA2 3,077
IS45S16160D-7BLA2-TR 6,750 IS45S16160D-7TLA2-TR 5,000
IS45S16160D-7CTLA1