IS45S16320B-7CTLA2

容量 512M
規格 32Mx16
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54), BGA(54)
温度等级 A2 = Automotive Grade (-40C to +105°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
腳位/封裝 T = TSOP
Generation B = B
總線寬度 16 = 16
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) C = 4
字數 32M = 32M
產品系列 45 = SDR Automotive grade

IS45S16320B-7CTLA2 特徵

  • Clock frequency: 166, 143, 133 MHz
  • -6 6 10 166 100 5.4 6 -7 7 10 143 100 5.4 6 -75E Unit
    • 7.5
    • 133
    • 5.5 ns ns Mhz Mhz ns ns
  • Internal bank for hiding row access/precharge
  • Power supply IS42/45S16320B IS42S86400B
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

 

相關IC编號

IS45S16320B-7CTLA2-TR IS45S16320B-7BLA2 IS45S16320B-7CTNA1-TR IS45S16320B-7TLA2
IS45S16320B-6BLA1 IS45S16320B-7BLA2-TR IS45S16320B-7CTNA2 IS45S16320B-7TLA2-TR
IS45S16320B-6BLA1-TR IS45S16320B-7CTLA1 IS45S16320B-7CTNA2-TR
IS45S16320B-7BLA1 IS45S16320B-7CTLA1-TR IS45S16320B-7TLA1
IS45S16320B-7BLA1-TR IS45S16320B-7CTNA1 IS45S16320B-7TLA1-TR