容量 64M
規格 4Mx16
電壓 3.3V
類型 SDR
刷新 4K
速度 7 = 143MHz
狀態 Contact ISSI
腳位數 TSOP2(54), BGA(54)
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 blank = Sn/Pb
腳位/封裝 T = TSOP
Generation F = F
總線寬度 16 = 16
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) C = 4
字數 4M = 4M
產品系列 45 = SDR Automotive grade

IS45S16400F-7CTNA2 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • Auto refresh (CBR)
  • 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP II 54-ball FBGA (8mm x 8mm)


ISSI's 64Mb Synchronous DRAM is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.



IS45S16400F-7CTNA2-TR IS45S16400F-6CTLA1 IS45S16400F-7BLA1-TR IS45S16400F-7CTNA1
IS45S16400F-5BLA1 IS45S16400F-6CTLA1-TR IS45S16400F-7BLA2 IS45S16400F-7CTNA1-TR
IS45S16400F-5BLA1-TR IS45S16400F-6CTNA1 IS45S16400F-7BLA2-TR IS45S16400F-7TLA1
IS45S16400F-5TLA1 IS45S16400F-6CTNA1-TR IS45S16400F-7CTLA1 IS45S16400F-7TLA1-TR
IS45S16400F-5TLA1-TR IS45S16400F-6TLA1 IS45S16400F-7CTLA1-TR IS45S16400F-7TLA2
IS45S16400F-6BLA1 IS45S16400F-6TLA1-TR IS45S16400F-7CTLA2 IS45S16400F-7TLA2-TR
IS45S16400F-6BLA1-TR IS45S16400F-7BLA1 IS45S16400F-7CTLA2-TR