IS45S32160F-7TLA1

容量 512M
規格 16Mx32
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 Prod
評注  
腳位數 TSOP(86), BGA(90)
温度等级 A1 = Automotive Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation F = F
總線寬度 32 = 32
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) T = 17
字數 16M = 16M
產品系列 45 = SDR Automotive grade

IS45S32160F-7TLA1 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45S32160F - Vdd/Vddq = 3.3V IS42/45R32160F - Vdd/Vddq = 2.5
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Packages: 90-ball TF-BGA, 86-pin TSOP-ll

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

 

相關IC编號

IS45S32160F-7TLA1-TR IS45S32160F-6TLA1 IS45S32160F-7BLA1-TR IS45S32160F-7TLA2
IS45S32160F-6BLA1 IS45S32160F-6TLA1-TR IS45S32160F-7BLA2 IS45S32160F-7TLA2-TR
IS45S32160F-6BLA1-TR IS45S32160F-7BLA1 IS45S32160F-7BLA2-TR