容量 128M
規格 4Mx32
電壓 3.3V
類型 SDR
刷新 4K
速度 6 = 166MHz
狀態 Contact ISSI
腳位數 TSOP2(86), BGA(90)
温度等级 A1 = Automotive Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation E = E
總線寬度 32 = 32
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) T = 17
字數 4M = 4M
產品系列 45 = SDR Automotive grade

IS45S32400E-6TLA1 特徵

  • Clock frequency: 166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 86-pin TSOP-II 90-ball TF-BGA


ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.



IS45S32400E-6TLA1-TR IS45S32400E-6BLA2-TR IS45S32400E-7BLA1-TR IS45S32400E-7TLA1-TR
IS45S32400E-6BLA1 IS45S32400E-7BA1 IS45S32400E-7BLA2 IS45S32400E-7TLA2
IS45S32400E-6BLA1-TR IS45S32400E-7BA1-TR IS45S32400E-7BLA2-TR IS45S32400E-7TLA2-TR
IS45S32400E-6BLA2 IS45S32400E-7BLA1 IS45S32400E-7TLA1