1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. 3.3V Automotive
  5. 256M 8Mx32
  6. TSOP(54), BGA(90)
  7. IS45S32800J-6BLA2

  IS45S32800J-6BLA2

數據表
索取報價
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容量 256M
規格 8Mx32
電壓 3.3V
類型 SDR
刷新 4K
速度 6 = 166MHz
狀態 Prod
評注
腳位數 TSOP(54), BGA(90)
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = SnAgCu
字數 800 = 8M
工作電壓範圍 S = 3.3V SDR
Generation J = J
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 45 = SDR Automotive grade
數據表
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IS45S32800J-6BLA2 特徵

  • Clock frequency:166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 90-ball TF-BGA, 86-pin TSOP2

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized in 2Meg x 32 bit x 4 Banks.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S32800J-6BLA2-TR IS45S32800J-6TLA2-TR
IS45S32800J-6TLA2