IS45S81600E

容量	128M
規格	16Mx8
電壓	3.3V
類型	SDR
刷新	4K
速度	166, 143
狀態	Contact ISSI
評注
腳位數	TSOP2(54)
字數	1600 = 16M
工作電壓範圍	S = 3.3V SDR
總線寬度	8 = x8
產品系列	45 = SDR Automotive grade

數據表

索取報價

IS45S81600E 特徵

Clock frequency: 166, 143 MHz
Internal bank for hiding row access/precharge
Power supply IS45S81600E IS45S16800E
LVTTL interface
Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

IC 編號

庫存數量

可用數量

IC 編號

庫存數量

可用數量

IS45S81600E-6TLA1

IS45S81600E-7CTNA1-TR

1,500

IS45S81600E-6TLA1-TR

IS45S81600E-7CTNA2

3,071