IS45S81600F-7CTLA2

容量 128M
規格 16Mx8
電壓 3.3V
類型 SDR
刷新 4K
速度 7 = 143MHz
狀態 Prod
評注
腳位數 TSOP2(54)
温度等级 A2 = Automotive Grade (-40C to +105°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
腳位/封裝 T = TSOP
Generation F = F
總線寬度 8 = 8
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) C = 4
字數 16M = 16M
產品系列 45 = SDR Automotive grade

IS45S81600F-7CTLA2 特徵

  • Clock frequency: 200, 166, 143 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS42/45S81600F IS42/45S16800F Vdd Vddq 3.3V 3.3V 3.3V 3.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

相關IC编號

IS45S81600F-7CTLA2-TR IS45S81600F-7CTLA1 IS45S81600F-7TLA1-TR
IS45S81600F-6TLA1 IS45S81600F-7CTLA1-TR IS45S81600F-7TLA2
IS45S81600F-6TLA1-TR IS45S81600F-7TLA1 IS45S81600F-7TLA2-TR