IS45S83200D-7CTNA2-TR

容量 256M
規格 32Mx8
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54)
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 blank = Sn/Pb
Generation D = D
字數 3200 = 32M
CL(CAS延遲) C = 4
工作電壓範圍 S = 3.3V SDR
總線寬度 8 = x8
腳位/封裝 T = TSOP
產品系列 45 = SDR Automotive grade
外包裝 Tape on Reel

IS45S83200D-7CTNA2-TR 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

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