| Buy | |
|---|---|
| 容量 | 8M |
| 電壓 | 1.65~1.95V |
| 狀態 | S=NOW |
| I / O寬度 | x1, x4 |
| 腳位數 | SOIC(8) |
| 溫度範圍 | -40 to 105°C |
| 速度Mhz Ns | 104 MHz |
| 評論上一篇 | Serial RAM |
| Item | 67 = Automotive PSRAM/HyperRAM™ |
| ROHS版 | L = true |
| 產品類別 | WVS = SerialRAM |
| 溫度範圍 | A1 = Automotive (-40°C to 85°C) |
| 速度 | 104 = 104 MHz |
| 電壓 - 電源 | ALL = 1.8V |
| 密度配置 | 1M8 = 8Mb /1M x8 |
| 包裝代碼 | K = 8-contact WSON 6x5mm |
The IS66/67WVS1M8ALL/BLL are integrated memory device containing 8Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 8 bits. The device supports SPI (Serial Peripheral Interface) & QPI (Quad Peripheral Interface) protocols, Very Low Signal Count (6 signal pins; CLK, CE#, and 4 SIOs), Hidden Refresh Operation, and Industrial temperature and Automotive A2 grade temperature. In-Band Reset is supported instead of dedicated RESET# pin, and minimum transferred data size is 8bit. PERFORMANCE SUMMARY.