容量 9M
規格 512Kx18
電壓 3.3V
VccQ 2.5/3.3V
狀態 Prod
tKQ(ns) 2.6, 3.1, 3.8
腳位數 BGA(119), QFP(100), BGA(165)
速度Mhz 250, 200, 166
評論上一版本 P/SCD, IS61LPS51218A

IS61LPS51218B-250B3I 特徵

  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write
  • Clock controlled, registered address, data and control
  • Burst sequence control using MODE input
  • Three chip enable option for simple depth ex- pansion and address pipelining
  • Common data inputs and data outputs
  • Auto Power-down during deselect
  • Single cycle deselect
  • Snooze MODE for reduced-power standby
  • JTAG Boundary Scan for BGA package
  • Power Supply LPS: Vdd 3.3V (+ 5%), Vddq 3.3V/2.5V (+ 5%) VPS: Vdd 2.5V (+ 5%), Vddq 2.5V (+ 5%) VVPS: Vdd 1.8V (+ 5%), Vddq 1.8V (+ 5%)
  • JEDEC 100-Pin QFP, 119-ball BGA, and 165- ball BGA packages


The 9Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and net- working applications. The IS61LPS/VPS25636B and IS64LPS25636B are organized as 262,144 words by 36 bits. The IS61LPS25632B is organized as 262,144 words by 32 bits. The IS61LPS/VPS51218B is organized as 524,288 words by 18 bits. Fabricated with ISSI's ad- vanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.



IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61LPS51218B-250B3I-TR IS61LPS51218B-200TQLI-TR
IS61LPS51218B-200B2I IS61LPS51218B-250B2I
IS61LPS51218B-200B2I-TR IS61LPS51218B-250B2I-TR
IS61LPS51218B-200B3I IS61LPS51218B-250TQ2LI
IS61LPS51218B-200B3I-TR IS61LPS51218B-250TQ2LI-TR
IS61LPS51218B-200TQ2LI IS61LPS51218B-250TQLI
IS61LPS51218B-200TQ2LI-TR IS61LPS51218B-250TQLI-TR