容量 4M
規格 128Kx36
電壓 3.3V
VccQ 2.5/3.3V
狀態 Prod
tKQ(ns) 2.6, 3.1
腳位數 BGA(119), QFP(100), BGA(165)
速度Mhz 250, 200
評論上一版本 P, ECC feature, IS61NLP12836B

IS61NLP12836EC-250B3LI 特徵

  • 100 percent bus utilization APRIL 2017
  • No wait cycles between Read and Write
  • Internal self-timed write cycle Individual Byte Write Control
  • Single R/W (Read/Write) control pin
  • Clock controlled, registered address, data and control
  • Interleaved or linear burst sequence control using MODE input
  • Three chip enables for simple depth expansion and address pipelining
  • Power Down mode
  • Common data inputs and data outputs
  • JEDEC 100-pin QFP, 165-ball BGA and 119- ball BGA packages
  • Power supply: NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%) NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) JTAG Boundary Scan for BGA packages Industrial and Automotive temperature support
  • Lead-free available


The 4Mb product family features high-speed, low- power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabricated with ISSI's advanced CMOS technology. Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, /CKE is HIGH. In this state the internal device will hold their previous values. All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW. Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when /WE is LOW. Separate byte enables allow individual bytes to be written. A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected.



IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61NLP12836EC-250B3LI-TR IS61NLP12836EC-200TQLI-TR 800
IS61NLP12836EC-200B2 IS61NLP12836EC-250B2
IS61NLP12836EC-200B2-TR IS61NLP12836EC-250B2-TR
IS61NLP12836EC-200B2I IS61NLP12836EC-250B2I
IS61NLP12836EC-200B2I-TR IS61NLP12836EC-250B2I-TR
IS61NLP12836EC-200B2L IS61NLP12836EC-250B2L
IS61NLP12836EC-200B2L-TR IS61NLP12836EC-250B2L-TR
IS61NLP12836EC-200B2LI IS61NLP12836EC-250B2LI
IS61NLP12836EC-200B2LI-TR IS61NLP12836EC-250B2LI-TR
IS61NLP12836EC-200B3 IS61NLP12836EC-250B3
IS61NLP12836EC-200B3-TR IS61NLP12836EC-250B3-TR
IS61NLP12836EC-200B3I IS61NLP12836EC-250B3I
IS61NLP12836EC-200B3I-TR IS61NLP12836EC-250B3I-TR
IS61NLP12836EC-200B3L IS61NLP12836EC-250B3L
IS61NLP12836EC-200B3L-TR IS61NLP12836EC-250B3L-TR
IS61NLP12836EC-200B3LI IS61NLP12836EC-250TQL
IS61NLP12836EC-200B3LI-TR IS61NLP12836EC-250TQL-TR
IS61NLP12836EC-200TQL IS61NLP12836EC-250TQLI
IS61NLP12836EC-200TQL-TR IS61NLP12836EC-250TQLI-TR
IS61NLP12836EC-200TQLI 72