IS61NLP25636B-200B3

容量 9M
規格 256Kx36
電壓 3.3V
VccQ 2.5/3.3V
狀態 Prod
tKQ(ns) 2.6, 3.1
腳位數 BGA(119), QFP(100), BGA(165)
速度Mhz 250, 200
評論上一版本 P, IS61NLP25636A

IS61NLP25636B-200B3 特徵

  • 100 percent bus utilization
  • No wait cycles between Read and Write
  • Internal self-timed write cycle
  • Individual Byte Write Control
  • Single R/W (Read/Write) control pin
  • Clock controlled, registered address, data and control
  • Interleaved or linear burst sequence control us- ing MODE input
  • Three chip enables for simple depth expansion and address pipelining
  • Power Down mode
  • Common data inputs and data outputs
  • CKE pin to enable clock and suspend operation
  • JEDEC 100-pin QFP, 165-ball BGA and 119-ball BGA packages
  • Power supply: NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%) NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%) NVVP: Vdd 1.8V (± 5%), Vddq 1.8V (± 5%)
  • JTAG Boundary Scan for BGA packages
  • Industrial temperature available

概觀

, 100 percent bus utilization , No wait cycles between Read and Write , Internal self-timed write cycle , Individual Byte Write Control , Single R/W (Read/Write) control pin , Clock controlled, registered address,

 

相關IC编號

IS61NLP25636B-200B3-TR IS61NLP25636B-200TQL IS61NLP25636B-250B2I-TR IS61NLP25636B-250TQLI
IS61NLP25636B-200B3I IS61NLP25636B-200TQL-TR IS61NLP25636B-250B3 IS61NLP25636B-250TQLI-TR
IS61NLP25636B-200B3I-TR IS61NLP25636B-200TQLI IS61NLP25636B-250B3-TR IS61NLP25636BHD-250TQL
IS61NLP25636B-200B3L IS61NLP25636B-200TQLI-TR IS61NLP25636B-250B3I IS61NLP25636BHD-250TQL-TR
IS61NLP25636B-200B3L-TR IS61NLP25636B-250B2 IS61NLP25636B-250B3I-TR
IS61NLP25636B-200B3LI IS61NLP25636B-250B2-TR IS61NLP25636B-250TQL
IS61NLP25636B-200B3LI-TR IS61NLP25636B-250B2I IS61NLP25636B-250TQL-TR