IS42S32800L-7BLI

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容量	256M
規格	8Mx32
電壓	3.3V
類型	SDR
刷新	4K
速度	7 = 143MHz
狀態	S=Q2/24
評注
腳位數	TSOP2(86), BGA(90)
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	800 = 8M
工作電壓範圍	S = 3.3V SDR
Generation	L = L
總線寬度	32 = x32
腳位/封裝	B = BGA
產品系列	42 = SDR Commercial/Industrial grade

IS42S32800L-7BLI 特徵

Clock frequency: 200, 166, 143, 133 MHz ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and
Fully synchronous; all signals referenced to a outputs signals refer to the rising edge of the clock input. positive clock edge The 256Mb SDRAM is organized in 2Meg x 32 bit x 4
Internal bank for hiding row access/precharge Banks.
Single Power supply: 3.3V + 0.3V
LVTTL interface KEY TIMING PARAMETERS
Programmable burst length Parameter -5 -6 -7 Unit
- (1, 2, 4, 8, full page) Clk Cycle Time
Programmable burst sequence: CAS Latency = 3 5 6 7 ns CAS Latency = 2 10 10 7.5 ns Sequential/Interleave Clk Frequency
Auto Refresh (CBR) CAS Latency = 3 200 166 143 Mhz
Self Refresh CAS Latency = 2 100 100 133 Mhz
4096 refresh cycles every 16ms (A2 grade) or Access Time from Clock 64 ms (Commercial, Industrial, A1 grade) CAS Latency = 3 4.8 5.4 5.4 ns CAS Latency = 2 6.5 6.5 5.5 ns
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability ADDRESS TABLE
Burst termination by burst stop and precharge Parameter 8M x 32 command Configuration 2M x 32 x 4 banks OPTIONS Refresh Count Com./Ind. 4K / 64ms
Package: A1 4K / 64ms 90-ball TF-BGA A2 4K / 16ms 86-pin TSOP2 Row Addresses A0
- A11