規格 64Kx16
電壓 2.4-3.6V
速度(ns) 8
腳位/封裝 T = TSOP
狀態 Prod
型號別 IBIS
評注 ECC Based SRAM
產品系列 61 = 高速
硅片版本 EE
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 [空白] = SnPb
温規 I = 工業級 (-40C to +85°C)

IS61WV6416EEBLL-8TI 特徵

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) FEBRUARY 2014 CMOS standby
  • Single power supply
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available


The ISSI IS61/64WV6416EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with in- novative circuit design techniques, yields high-performance and low power consumption devices.