IS61WV6416EEBLL-8TI-TR

容量 1M
規格 64Kx16
電壓 2.4-3.6V
狀態 Prod
腳位數 TSOP2(44), SOJ(44), BGA(48)
速度Ns 8, 10
評論上一篇 ECC Based SRAM

IS61WV6416EEBLL-8TI-TR 特徵

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) FEBRUARY 2014 CMOS standby
  • Single power supply
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available

概觀

The ISSI IS61/64WV6416EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with in- novative circuit design techniques, yields high-performance and low power consumption devices.

 

相關IC编號

IS61WV6416EEBLL-8TI IS61WV6416EEBLL-10BLI-TR IS61WV6416EEBLL-10TLI-TR IS61WV6416EEBLL-8BLI-TR
IS61WV6416EEBLL-10BI IS61WV6416EEBLL-10TI IS61WV6416EEBLL-8BI IS61WV6416EEBLL-8TLI
IS61WV6416EEBLL-10BI-TR IS61WV6416EEBLL-10TI-TR IS61WV6416EEBLL-8BI-TR IS61WV6416EEBLL-8TLI-TR
IS61WV6416EEBLL-10BLI IS61WV6416EEBLL-10TLI IS61WV6416EEBLL-8BLI