| 容量 | 8M |
|---|---|
| 規格 | 512Kx16 |
| 電壓 | 1.65-3.6V |
| 狀態 | S=NOW |
| 腳位數 | TSOP2(44), BGA(48) |
| 速度Ns | 45, 55 |
| 評論上一篇 | |
| 電壓範圍 | BLL = 2.5V to 3.6V |
| 温度等级 | A3 = Automotive Grade (-40°C to +125°C) |
| 焊料類型 | L = Lead-free (ROHS Compliant) |
| Revision | H = H |
| 字數 | 512 = 512K |
| 速度 | 55 = 55NS |
| Bit Org | 16 = x16 |
| 產品系列 | 65 = Automotive Low Power |
| Operating Voltage | WV = Wide Voltage Range |
| 包裝代碼 | CT = Copper TSOP |
The ISSI IS62/65WV51216HALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.