IS46TR16640ED-125KBLA1

可提供
生產年份 數量
17+ 10,000
容量 1G
規格 64Mx16
電壓 1.5V
類型 DDR3
刷新 8K
速度 125 = 800MHz
狀態 Prod
評注 ECC
腳位數 BGA(96)
温度等级 A1 = Automotive Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
腳位/封裝 B = BGA
Generation ED = ED
總線寬度 16 = 16
工作電壓範圍 TR = DDR3
CL(CAS延遲) K = 11
字數 64M = 64M
產品系列 46 = DDR/DDR2/DDR3/DDR4 Automotive grade
可提供
生產年份 數量
17+ 10,000

IS46TR16640ED-125KBLA1 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • High speed data transfer rates with system frequency up to 800 MHz
  • 8 internal banks for concurrent operation
  • 8n-bit pre-fetch architecture
  • Programmable CAS Latency
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) ECC
  • Single bit error correction (per 64-bits)
  • Restrictions on Burst Length and Data Mask OPTIONS
  • Configuration: 128Mx8 64Mx16
  • Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN Speed Option 15H 125K MARCH 2018
  • Refresh Interval: 7.8 μs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 μs (8192 cycles/32 ms) Tc= 85°C to 105°C 1.95 μs (8192 cycles/16ms)Tc=105°C to 125°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )
  • Write Leveling
 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS46TR16640ED-125KBLA1-TR IS46TR16640ED-15HBLA1-TR
IS46TR16640ED-125KBLA2 IS46TR16640ED-15HBLA2
IS46TR16640ED-125KBLA2-TR IS46TR16640ED-15HBLA2-TR
IS46TR16640ED-125KBLA3 IS46TR16640ED-15HBLA3
IS46TR16640ED-125KBLA3-TR IS46TR16640ED-15HBLA3-TR
IS46TR16640ED-15HBLA1 1,900