1. 矽成
2. 動態記憶體
3. ECC DDR3 SDRAM
4. 車用ECC 1.5伏DDR3 SDRAM
5. 1.5V
6. BGA(96)
7. IS46TR16640ED-125KBLA2-TR

IS46TR16640ED-125KBLA2-TR 特徵

• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• High speed data transfer rates with system frequency up to 800 MHz
• 8 internal banks for concurrent operation
• 8n-bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT) ECC
• Single bit error correction (per 64-bits)
• Restrictions on Burst Length and Data Mask OPTIONS
• Configuration: 128Mx8 64Mx16
• Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN Speed Option 15H 125K MAY 2017
• Refresh Interval: 7.8 μs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 μs (8192 cycles/32 ms) Tc= 85°C to 105°C 1.95 μs (8192 cycles/16ms)Tc=105°C to 125°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8 only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )
• Write Leveling