IS49NLC18160A-25EWBLI-TR
特徵
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The 2Gb (DDP:Dual Die Package) RLDRAM 3
Options
2Gb: x18, x36 RLDRAM 3
Features
ADVANCED INFORMATION
uses ISSI’s 1Gb RLDRAM 3 die.
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933 MHz DDR operation (1866 Mb/s/ball data rate)
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Organization
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128 Meg x 18, and 64 Meg x 36 common I/O
16 banks
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1.2V center-terminated push/pull I/O
2.5V VEXT, 1.35V VDD, 1.2V VDDQ (optional 1.35V VDDQ
for 1866 operation only).
Reduced cycle time (tRC (MIN) = 8ns)
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SDR addressing
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Programmable READ/WRITE latency (RL/WL) and
burst length
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Data mask for WRITE commands
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Fr
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Clock cycle and
tRC timing
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- 1.07 ns and tRC (MIN) = 8ns (RL3-1866) for -107E
- 1.25ns and tRC (MIN) = 10ns (RL3-1600) for -125E
- 1.25ns and tRC (MIN) = 12ns (RL3-1600) for -125
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On-die DLL generates CK edge-aligned data and
x,
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64ms refresh (128K refresh per 64ms)
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40 Ω or 60 Ω matched impedance outputs
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Integrated on-die termination (ODT)
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Single or multibank writes
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READ training register
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Multiplexed and non-multiplexed addressing capa-
Extended operating range (200
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Mirror function
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Output driver and ODT calibration
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Post Package Repar - 1 row per half bank