容量 16M
規格 1Mx16
電壓 3.3V
類型 SDR
刷新 2K
速度 7 = 143MHz
狀態 Contact ISSI
腳位數 TSOP2(50), BGA(60)
温度等级 I = Industrial Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation F = F
總線寬度 16 = 16
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) T = 17
字數 1M = 1M
產品系列 42 = SDR Commercial/Industrial grade

IS42S16100F-7TLI 特徵

  • Clock frequency: IS42/45S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz JUNE 2012
  • Fully synchronous; all signals referenced to a positive clock edge
  • Two banks can be operated simultaneously and independently
  • Dual internal bank controlled by A11 (bank select)
  • Single power supply: IS42/45S16100F: Vdd/Vddq = 3.3V IS42VS16100F: Vdd/Vddq = 1.8V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • 2048 refresh cycles every 32 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Byte controlled by LDQM and UDQM
  • Packages 400-mil 50-pin TSOP-II and 60-ball BGA
  • Lead-free package option


ISSI’s 16Mb Synchronous DRAM IS42S16100F, IS45S16100F and IS42VS16100F are each organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high- speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.



IS42S16100F-7TLI-TR IS42S16100F-6BL IS42S16100F-6TL-TR IS42S16100F-7BLI
IS42S16100F-5BL IS42S16100F-6BL-TR IS42S16100F-6TLI IS42S16100F-7BLI-TR
IS42S16100F-5BL-TR IS42S16100F-6BLI IS42S16100F-6TLI-TR IS42S16100F-7TL
IS42S16100F-5TL IS42S16100F-6BLI-TR IS42S16100F-7BL IS42S16100F-7TL-TR
IS42S16100F-5TL-TR IS42S16100F-6TL IS42S16100F-7BL-TR