容量 64M
規格 2Mx32
電壓 3.3V
類型 SDR
刷新 4K
速度 5 = 200MHz
狀態 Contact ISSI
腳位數 TSOP2(86), BGA(90)
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation E = E
總線寬度 32 = 32
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) T = 17
字數 2M = 2M
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42S32200E-5TL-TR 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length: (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Packages: 86-pin TSOP-II 90-ball TF-BGA


ISSI's 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high- speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.



IS42S32200E-5TL IS42S32200E-6BL IS42S32200E-6TLI-TR IS42S32200E-7TL
IS42S32200E-5BL IS42S32200E-6BL-TR IS42S32200E-7B IS42S32200E-7TL-TR
IS42S32200E-5BL-TR IS42S32200E-6BLI IS42S32200E-7B-TR IS42S32200E-7TLI
IS42S32200E-6B IS42S32200E-6BLI-TR IS42S32200E-7BL IS42S32200E-7TLI-TR
IS42S32200E-6B-TR IS42S32200E-6TL IS42S32200E-7BL-TR
IS42S32200E-6BI IS42S32200E-6TL-TR IS42S32200E-7BLI
IS42S32200E-6BI-TR IS42S32200E-6TLI IS42S32200E-7BLI-TR