IS42S32200E-7B

容量 64M
規格 2Mx32
電壓 3.3V
類型 SDR
刷新 4K
速度 7 = 143MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(86), BGA(90)
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 blank = Sn/Pb
Generation E = E
字數 200 = 2M
工作電壓範圍 S = 3.3V SDR
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42S32200E-7B 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length: (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Packages: 86-pin TSOP-II 90-ball TF-BGA

概觀

ISSI's 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high- speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S32200E-7B-TR 2,500 IS42S32200E-6BLI-TR 5,000
IS42S32200E IS42S32200E-6TL 142 531
IS42S32200E-5BL IS42S32200E-6TL-TR 6,709
IS42S32200E-5BL-TR IS42S32200E-6TLI 1
IS42S32200E-5TL 6,825 IS42S32200E-6TLI-TR 5,000
IS42S32200E-5TL-TR 6,337 IS42S32200E-7BL 636 601
IS42S32200E-6B 6,386 IS42S32200E-7BL-TR 6,282
IS42S32200E-6B-TR 6,659 IS42S32200E-7BLI 775 775
IS42S32200E-6BI 25,743 9,600 IS42S32200E-7BLI-TR 5,000
IS42S32200E-6BI-TR 6,386 IS42S32200E-7TL 72 6,127
IS42S32200E-6BL 185 138 IS42S32200E-7TL-TR 6,950
IS42S32200E-6BL-TR 6,448 IS42S32200E-7TLI 323
IS42S32200E-6BLI 1,006 IS42S32200E-7TLI-TR 6,925