IS45S16800E-6BLA1

容量 128M
規格 8Mx16
電壓 3.3V
類型 SDR
刷新 4K
速度 6 = 166MHz
狀態 Contact ISSI
評注  
腳位數 TSOP2(54), BGA(54)
温度等级 A1 = Automotive Grade (-40C to +85°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation E = E
總線寬度 16 = 16
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) B = 3
字數 8M = 8M
產品系列 45 = SDR Automotive grade

IS45S16800E-6BLA1 特徵

  • Clock frequency: 166, 143 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS45S81600E IS45S16800E
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

相關IC编號

IS45S16800E-6BLA1-TR IS45S16800E-7BLA2 IS45S16800E-7CTLA2-TR IS45S16800E-7TLA1
IS45S16800E-6TLA1 IS45S16800E-7BLA2-TR IS45S16800E-7CTNA1 IS45S16800E-7TLA1-TR
IS45S16800E-6TLA1-TR IS45S16800E-7CTLA1 IS45S16800E-7CTNA1-TR IS45S16800E-7TLA2
IS45S16800E-7BLA1 IS45S16800E-7CTLA1-TR IS45S16800E-7CTNA2 IS45S16800E-7TLA2-TR
IS45S16800E-7BLA1-TR IS45S16800E-7CTLA2 IS45S16800E-7CTNA2-TR