IS45S16800E-7BLA2-TR

容量 128M
規格 8Mx16
電壓 3.3V
類型 SDR
刷新 4K
速度 7 = 143MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54), BGA(54)
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = SnAgCu
Generation E = E
字數 800 = 8M
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 45 = SDR Automotive grade
外包裝 Tape on Reel

IS45S16800E-7BLA2-TR 特徵

  • Clock frequency: 166, 143 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS45S81600E IS45S16800E
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S16800E-7BLA2 884 884 IS45S16800E-7CTLA2 2,867
IS45S16800E IS45S16800E-7CTLA2-TR
IS45S16800E-6BLA1 6,921 IS45S16800E-7CTNA1 11,434
IS45S16800E-6BLA1-TR 7,500 IS45S16800E-7CTNA1-TR 1,500
IS45S16800E-6TLA1 5,000 IS45S16800E-7CTNA2 108
IS45S16800E-6TLA1-TR 6,371 IS45S16800E-7CTNA2-TR 1,500
IS45S16800E-7BLA1 6,825 IS45S16800E-7TLA1 6,598
IS45S16800E-7BLA1-TR 6,736 IS45S16800E-7TLA1-TR 6,357
IS45S16800E-7CTLA1 35,194 IS45S16800E-7TLA2 324 3,496
IS45S16800E-7CTLA1-TR IS45S16800E-7TLA2-TR 6,485