IS42S16800E-5TL

容量 128M
規格 8Mx16
電壓 3.3V
類型 SDR
刷新 4K
速度 5 = 200MHz
狀態 Contact ISSI
評注  
腳位數 TSOP2(54), BGA(54)
温度等级 blank = Commercial Grade (0C to +70°C)
焊料類型 L = 100% matte Sn for non-BGA or SnAgCu for BGA
Generation E = E
總線寬度 16 = 16
工作電壓範圍 S = 3.3V SDR
CL(CAS延遲) T = 17
字數 8M = 8M
產品系列 42 = SDR Commercial/Industrial grade

IS42S16800E-5TL 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS42S81600E IS42S16800E
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

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