IS42S16800E-6BLI

容量 128M
規格 8Mx16
電壓 3.3V
類型 SDR
刷新 4K
速度 6 = 166MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54), BGA(54)
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation E = E
字數 800 = 8M
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42S16800E-6BLI 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS42S81600E IS42S16800E
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S16800E-6BLI-TR 6,209 IS42S16800E-75EBL-TR 6,818
IS42S16800E IS42S16800E-75EBLI 6,759
IS42S16800E-5BL IS42S16800E-75EBLI-TR 6,466
IS42S16800E-5BL-TR IS42S16800E-75ET 798
IS42S16800E-5BLI IS42S16800E-75ET-TR
IS42S16800E-5BLI-TR IS42S16800E-75ETL 5,000
IS42S16800E-5TL 2,000 IS42S16800E-75ETL-TR 6,721
IS42S16800E-5TL-TR 1,500 IS42S16800E-75ETLI 6,513
IS42S16800E-5TLI 108 IS42S16800E-75ETLI-TR 5,000
IS42S16800E-5TLI-TR 1,500 IS42S16800E-7BL 5,336 2,897
IS42S16800E-6BL 6,705 IS42S16800E-7BL-TR 6,749
IS42S16800E-6BL-TR 6,230 IS42S16800E-7BLI 96
IS42S16800E-6TL 318 210 IS42S16800E-7BLI-TR 6,241
IS42S16800E-6TL-TR 6,815 IS42S16800E-7TL 481 47
IS42S16800E-6TLI 286 IS42S16800E-7TL-TR 6,094
IS42S16800E-6TLI-TR 5,000 IS42S16800E-7TLI 1,366
IS42S16800E-75EBL 3,368 2,360 IS42S16800E-7TLI-TR 6,216